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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -120 -120 -5 -8 -0.8 UNIT V V V A A W ae ae Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 55 10 280 MIN -120 2SB688 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT Cob TYP. MAX UNIT V -2.5 -1.5 -10 -10 160 |I |I V V A A MHz pF hFE Classifications R 55-110 O 80-160 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB688 SEM GE HAN INC OND IC 0.10 mm) TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB688 SEM GE HAN INC OND IC TOR UC 4 |
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